THE OLDEST METHOD
Push dopant in with heat
Diffusion doping heats the wafer with a dopant source at its surface. Dopant atoms wander into the crystal the way a drop of ink spreads through water, moving from high concentration toward low. It was the standard doping method for decades, and it is still used where fine depth control does not matter.
DOPANT SOURCES
Three ways to supply the surface
Solid source
A disc of dopant-glass sits face to face with the wafer in a furnace
Liquid source
A carrier gas bubbles through a liquid dopant compound
Gas source
A gas such as phosphine or diborane flows over the wafer directly
TWO STEPS
Predeposition, then drive-in
THE PROFILE
Concentration fades smoothly with depth
Diffusion leaves a graded profile: concentration peaks at the surface and falls off smoothly with depth. The junction depth is where the falling dopant concentration crosses the silicon's original background doping.
WHY IT FADED
Heat spreads sideways too
Diffusion pushes dopant sideways under a mask edge by roughly as much as it pushes down, which was fine when features were microns wide. At the width of a modern transistor gate, that sideways spread eats into space the design can't spare, which is why ion implantation replaced diffusion for defining transistors.
UNIT 20 STUDY COMPLETE
Ready for the Fab Challenge?
You've covered the oldest way to move dopant into silicon: predeposition and drive-in.