BTIBias-temperature instability: charge trapped near the gate dielectric shifts the threshold
HCIHot-carrier injection: energetic carriers near the drain damage the interface
TDDBTime-dependent dielectric breakdown: a conducting path forms through the gate oxide
ElectromigrationCurrent pushes metal atoms along a wire until it opens: a wiring effect
A chip is sold with a promise of about ten years at high temperature.
BIAS-TEMPERATURE INSTABILITY
The threshold creeps
ΔVth = A(V, T) · tn
Under bias, charges tunnel into traps in and near the gate dielectric and slowly shift the threshold. The shift grows as a power law of time with a small exponent, and both higher voltage and higher temperature speed it up. A larger Vth weakens the drive current, so the circuit slows as it ages. Part of the shift recovers when the stress is removed.
Aging eats the timing margin: the chip has to be designed for the end of its life.
OXIDE BREAKDOWN
The weakest link
Defects pile up in the gate dielectric until a conducting path forms. Each transistor has a random lifetime, spread widely (a Weibull distribution), so the failure of the first one out of billions comes very much earlier than the average. That is why gate oxides are run at modest fields, and why a bigger chip has a shorter life at the same voltage.
A chip is a chain, and it breaks at its weakest oxide.
HOW CHIPS COPE
Margins, burn-in and monitors
Guard bandsDesign for the aged state: leave timing margin for the threshold shift a chip will have after ten years
Burn-inRun new chips hot and at high voltage so the weak ones fail in the factory, not in your hands
Aging monitorsOn-chip sensors track the shift and adapt the voltage or the clock
The sensor linkThe same slow charge trapping near an insulator is why ISFETs drift (Unit 13): aging and sensor drift are one physics
Understanding the trap is useful for both a processor and a biosensor.
CHECK THE MECHANISMS
Which aging mechanism?
Trapping, hot carriers, breakdown and migration: four ways time wins.
UNIT 26 STUDY COMPLETE
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Ready for the Fab Challenge?
You've seen how time changes a transistor, and that the slow charge trapping which ages chips is the same thing that makes sensors drift.