STRUCTURE
The layers, from the top
An n-channel MOSFET is built on a p-type silicon body. Two heavily doped n⁺ regions form the source and drain. Between them, a thin oxide separates the gate from the silicon surface, where the channel will form when the gate is on.
FOUR TERMINALS
Gate, source, drain, body
Gate
Sets the field that creates or removes the channel
Source
The reference end: gate voltage is measured against it
Drain
Collects the current, usually held at a higher voltage in NMOS
Body
The substrate, usually tied to the source or to ground
THE MATERIALS
What each part is made of
SIZE MATTERS
The W/L ratio
The channel length L runs from source to drain, and the width W runs across it. A wider channel carries more current in parallel, and a shorter one adds less resistance. The ratio W/L is the designer's main knob, with L ranging from micrometers in classic devices to tens of nanometers in leading-edge chips.
TWO FLAVORS
NMOS and PMOS
NMOS
p-type body, n⁺ source and drain, electron channel. Turns on with a positive gate voltage
PMOS
n-type body, p⁺ source and drain, hole channel. Turns on with a negative gate voltage
CMOS
Both kinds on one chip, so almost no current flows when idle
UNIT 3 STUDY COMPLETE
Ready for the Fab Challenge?
You've covered gate, oxide, source, drain, body, and the NMOS and PMOS pair.